PEAK - DCA55 halvleder transistortester

Egenskaber:

• Automatisk komponenttype indentifikation
• Automatisk benidentifikation
• Special feature identifikation som f.eks. beskyttelsesdioder og shuntmodstande
• Bipolare transistorer: Gain and leakage strømmålinger, silicon og germanium detektion
• Gate threshold måling for Enhancement Mode MOSFETs
• Halvleder forward voltage måling for dioder, LEDs og transistor Base-Emitter samlinger
• Automatisk og manuel slukfunktion

Tekniske detaljer:

• Peak test current into short circuit: -5.5mA ~ 5.5mA
• Peak test voltage across open circuit: -5.1V ~ 5.1V
• Transistor:
  • gain område (Hfe): 4 ~ 65000
  • gain accuracy: ±3% ±5 Hfe
  • Vceo test voltage: 2.0V ~ 3.0V
  • Vbe accuracy: -2%-20mV ~ +2%+20mV
  • VBE for Darlington (shunted): 0.95V ~ 1.80V (0.75V ~ 1.80V)
  • Base-emitter shunt threshold: 50kOhm ~ 70kOhm
  • BJT collector test current: 2.45mA ~ 2.55mA
  • BJT acceptable leakage: 0.7mA
  • MOSFET:
    • gate threshold range: 0.1V ~ 5.0V
    • Threshold accuracy: -2%-20mV ~ +2%+20mV
    • Drain test current: 2.45mA ~ 255mA
    • gate resistance: 8kOhm
  • Depletion drain test current: 4.5mA
  • JFET drain-source test current: 0.5mA ~ 5.5mA
• SCR/Triac:
  • gate test current: 4.5mA
  • Load test current: 5.0mA
• Diode:
  • Test current: 5.0mA
  • Voltage accuracy: -2%-20mV ~ +2%+20mV
  • Vf for LED identification: 1.50V ~ 4.00V
  • Short circuit threshold: 10Ohm
• Batteri:
  • Type: MN21 / L1028 / GP23A 12V alkaline
  • Voltage range: 7.50V ~ 12V
  • Warning threshold: 8,25V
• Størrelse: 103x70x20mm